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 SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD2025
DESCRIPTION *With TO-220Fa package *High DC current gain *Low saturation voltage *DARLINGTON *Complement to type 2SB1344 APPLICATIONS *For low frequency power amplifier and power driver applications
PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-220Fa) and symbol DESCRIPTION
Absolute maximum ratings(Ta=25 )
SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector -emitter voltage Emitter-base voltage Collector current Collector current-peak Ta=25 PC Collector power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 30 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE 100 100 7 8 10 2 W UNIT V V V A A
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD2025
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN TYP. MAX UNIT
SYMBOL
V(BR)CEO
Collector-emitter breakdown voltage
IC=5mA; IB=0
100
V
V(BR)CBO
Collector-base breakdown voltage
IC=50A; IE=0
100
V
VCEsat
Collector-emitter saturation voltage
IC=3A ;IB=6mA
1.5
V
ICBO
Collector cut-off current
VCB=100V; IE=0
10
A
IEBO
Emitter cut-off current
VEB=5V; IC=0
3.0
mA
hFE
DC current gain
IC=2A ; VCE=3V
1000
20000
fT
Transition frequency
IC=0.2A ; VCE=5V
40
MHz
COB
Output capacitance
IE=0 ; VCB=10V;f=1MHz
50
pF
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SD2025
Fig.2 Outline dimensions (unindicated tolerance: 0.15 mm)
3


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